Conductance modulation by individual acceptors in Si nanoscale field-effect transistors

被引：78

作者：

Ono, Y. ^{[1
]}

Nishiguchi, K.

Fujiwara, A.

Yamaguchi, H.

Inokawa, H.

Takahashi, Y.

机构：

[1] NTT Corp, NTT Basic Res Labs, 3-1 Morinosato, Kanagawa 2430198, Japan

[2] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

[3] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 10期

关键词：

D O I：

10.1063/1.2679254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors measured low-temperature (6-28 K) conductance in nanoscale p-channel field-effect transistors lightly doped with boron. They observed a conductance modulation, which they ascribed to the trapping/detrapping of single holes by/from individual acceptors. The statistics of the appearance of the modulation in a few ten samples indicates that the number of acceptors is small, or even just one, suggesting that what the authors have observed is single-charge-transistor operation by a single-acceptor quantum dot. (c) 2007 American Institute of Physics.

引用

页数：3

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