Direct wafer bonding for nanostructure preparations

被引：1

作者：

Moriceau, H. ^{[1
]}

Rieutord, F. ^{[2
]}

Morales, C. ^{[1
]}

Charvet, A. M. ^{[1
]}

Rayssac, O. ^{[3
]}

Bataillou, B. ^{[2
,3
]}

Fournel, F. ^{[1
]}

Eymery, J. ^{[2
]}

Pascale, A. ^{[1
,2
]}

Gentile, P. ^{[2
]}

Bavard, A. ^{[1
,2
]}

Meziere, J. ^{[1
]}

Maleville, C. ^{[3
]}

Aspar, B. ^{[1
,4
]}

机构：

[1] CEA GRE, CEA DRT LETI, 17 Rue Martyrs, F-38054 Grenoble 9, France

[2] CEA GRE, CEA DRFMC, 17 Rue Martyrs, F-38054 Grenoble 9, France

[3] Parc Technol Fontaine, SOITEC SA, F-38190 Bernin, France

[4] TRACIT Technol, F-38054 Grenoble, France

来源：

NANOSCIENCE AND TECHNOLOGY, PTS 1 AND 2 | 2007年 / 121-123卷

关键词：

direct wafer bonding; SOI; bonded heterostructures; Si-Si bonded structures; bonding interfaces; hydrophilic; hydrophobic; periodic networks; dislocations; nanometer scale;

D O I：

10.4028/www.scientific.net/SSP.121-123.29

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Direct Wafer Bonding has been widely developed and is very attractive for a lot of applications. Using original techniques based on direct bonding enable to carry out specific engineered substrates. Various illustrations are given among which twisted Si-Si bonded substrates, where buried dislocation networks play a key role in the subsequent elaboration of nanostructures.

引用

页码：29 / 32

页数：4

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