Influence of processing and of material defects on the electrical characteristics of SiC-SBDs and SiC-MOSFETs

被引：13

作者：

Fukuda, K. ^{[1
]}

Kinoshita, A. ^{[1
]}

Ohyanagi, T. ^{[2
]}

Kosugi, R. ^{[1
]}

Sakata, T. ^{[2
]}

Sakuma, Y. ^{[1
]}

Senzaki, J. ^{[1
]}

Minami, A. ^{[2
]}

Shimozato, A. ^{[1
]}

Suzuki, T. ^{[2
]}

Hatakeyama, T. ^{[2
]}

Shinohe, T. ^{[2
]}

Matsuhata, H. ^{[1
]}

Yamaguchi, H. ^{[1
]}

Nagai, I. ^{[1
]}

Harada, S. ^{[1
]}

Ichinoseki, K. ^{[2
]}

Yatsuo, T. ^{[1
]}

Okumura, H. ^{[1
]}

Arai, K. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, ESERL, AIST Tsukuba Cent 2,1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[2] R&D Assoc Future Electron Devices, Tsukuba, Ibaraki 3058568, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

SiC-SBDs; SIC-MOSFETs; dislocations; defects; channel mobility; oxide reliability; BREAKDOWN; VOLTAGE; DIODES;

D O I：

10.4028/www.scientific.net/MSF.645-648.655

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

The influences of processing and material defects on the electrical characteristics of large-capacity (approximately 100A) SiC-SBDs and SiC-MOSFETs have been investigated. In the case of processing defects, controlled activation annealing is the most important factor. On the other hand for material defects, the number of epitaxial defects must be decreased to zero for both SBDs and MOSFETs. The dislocation defects in SiC wafers are dangerous for the breakdown voltage of MOSFETs. However, they are not killer defects. If the epitaxial defect density is sufficiently low and the dislocation density is in the order of 10000cm(-2), the long- term reliability of the gate oxide at the electric field of 3MV/cm can be guaranteed.

引用

页码：655 / +

页数：2

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