Port-match optimization of microwave low-noise amplifiers

被引:0
作者
Eccleston, KW [1 ]
机构
[1] Natl Univ Singapore, Dept Elect Engn, Singapore 119260, Singapore
关键词
low-noise amplifier; microwave amplifier; microwave FET amplifier; microwave low-noise amplifier;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The traditional approach to microwave low-noise amplifier design is to use graphical aids involving gain, noise, mismatch, and stability circles. In this paper, we propose a method, which avoids graphical methods, and uses a formula for the source reflection coefficient to minimize noise measure and a robust numerical method for the load reflection coefficient to optimize the match at each port The method is tested on a number of different transistors. (C) 2000 John Wiley & Sons, Inc.
引用
收藏
页码:321 / 323
页数:3
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