Minority carrier lifetime and diffusion length in Si1-x-yGexCy heterolayers

被引：10

作者：

Samanta, SK ^{[1
]}

Maikap, S ^{[1
]}

Chatterjee, S ^{[1
]}

Maiti, CK ^{[1
]}

机构：

[1] Indian Inst Technol Kharagpur, Dept Elect & ECE, Kharagpur 721302, W Bengal, India

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 05期

关键词：

generation lifetime; diffusion length; silicon germanium carbon (SiGeC);

D O I：

10.1016/S0038-1101(02)00445-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The minority carrier lifetime and diffusion length have been measured in partially strain-compensated Si0.795Ge0.2C0.005 layers grown using ultrahigh vacuum chemical vapor deposition. A minority carrier lifetime greater than 1 mus has been observed. The data indicate that the minority carrier lifetimes are degraded due to carbon incorporation. (C) 2003 Elsevier Science Ltd. All rights reserved.

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收藏

页码：893 / 897

页数：5

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