Synthesis, annealing, characterization, and electronic properties of thin films of a quaternary semiconductor; copper zinc tin sulfide

被引:12
|
作者
El Kissani, A. [1 ]
Nkhaili, L. [1 ]
Ammar, A. [2 ]
Elassali, K. [1 ]
Outzourhit, A. [1 ]
机构
[1] Cadi Ayyad Univ, Fac Sci Semlalia, Solid State Phys & Thin Films Lab, POB 2390, Marrakech 40000, Morocco
[2] Cadi Ayyad Univ, Fac Sci Semlalia, Dept Chem, Marrakech 40000, Morocco
关键词
Annealing; copper zinc tin sulfide; Cu2ZnSnS4 (CZTS); Schottky diodes; sol gel; SOLAR-CELLS; CU2ZNSNS4;
D O I
10.1080/00387010.2016.1167086
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
Copper zinc tin sulfide thin films were successfully prepared by spin coating on Molybdenum-coated glass substrates. The as-deposited thin films were annealed at 400 degrees C, 450 degrees C, and 500 degrees C in an Argon atmosphere for 1hr. X-ray diffraction studies revealed that the thin films present the kesterite phase. The band gap decreased with increasing annealing temperature. Schottky barrier-type structures were fabricated and showed a rectifying behavior. The estimated values of the barrier height, the built-in voltage, and the doping density were, respectively, phi(B)=0.71eV, N-a=5x10(18)cm(-3), and V-bi=0.33V for annealed films.
引用
收藏
页码:343 / 347
页数:5
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