Hydride vapour phase epitaxy for nanostructures

被引：3

作者：

Messmer, ER ^{[2
]}

Lourdudoss, S

Ahopelto, J

Lipsanen, H

Hieke, K

Wesstrom, JO

Reithmaier, JP

Kerkel, K

Forchel, A

Seifert, W

Carlsson, N

Samuelson, L

机构：

[1] VTT Semicond Lab, Espoo, Finland

[2] Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden

[3] Helsinki Univ Technol, Helsinki, Finland

[4] Univ Wurzburg, D-97070 Wurzburg, Germany

[5] Univ Lund, Dept Solid State Phys, S-22100 Lund, Sweden

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1998年 / 51卷 / 1-3期

关键词：

patterned and selective area growth; reduction of non-radiative centres; hydride vapour phase epitaxy;

D O I：

10.1016/S0921-5107(97)00268-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB). (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：238 / 241

页数：4

共 6 条

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[J]. APPLIED PHYSICS LETTERS, 1997, 70 (21) : 2828 - 2830
[4] OPTICAL ANALYSIS OF WET CHEMICALLY ETCHED INGAAS/INP WIRES
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[6] WESTROM JO, 1997, APPL PHYS LETT, V70, P1302

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