Effect of activated dislocations on recrystallization behavior in aluminum bicrystal with originally twin boundary

被引:0
|
作者
Kashihara, K [1 ]
Inoko, F [1 ]
机构
[1] Wakayama Natl Coll Technol, Wakayama 6440023, Japan
来源
ELECTRON MICROSCOPY: ITS ROLE IN MATERIALS SCIENCE: THE MIKE MESHII SYMPOSIUM | 2003年
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of activated dislocations on primary. recrystallization is studied using an aluminum bicrystal specimen with twin boundary at initial orientation. Many deformation bands (DBs) develop in matrixes after deformation in tension to 48% strain. When the deformed specimen is annealed, the strain induced boundary migration (SIBM) takes place along the original grain boundary (GB); whereas the <111> rotated recrystallized grains are formed at DBs. The SIBM is caused mainly by accumulation of edge dislocations at the GB. Screw dislocations are also piled up against the GB during the deformation. But they are not stored steadily at the GB, because the geometrical condition for the GB cross slips is still satisfied even at 48% strain. So, due to the GB cross slips the screw dislocations do not contribute to the recrystallization behavior at the GB.
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页码:89 / 96
页数:8
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