Two-dimensional type-II Dirac fermions in a LaAlO3/LaNiO3/LaAlO3 quantum well

被引:18
作者
Tao, L. L. [1 ]
Tsymbal, Evgeny Y.
机构
[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
基金
美国国家科学基金会;
关键词
ELECTRONIC-PROPERTIES; NICKEL-OXIDE; INTERFACES; GRAPHENE;
D O I
10.1103/PhysRevB.98.121102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The type-II Dirac fermions that are characterized by a tilted Dirac cone and anisotropic magnetotransport properties have been recently proposed theoretically and confirmed experimentally. Here, we predict the emergence of two-dimensional (2D) type-II Dirac fermions in LaAlO3/LaNiO3/LaAlO3 quantum-well structures. Using first-principles calculations and model analyses, we show that the Dirac points are formed at the crossing between the d(x2-y2) and d(z2) bands protected by the mirror symmetry. The energy position of the Dirac points can be tuned to appear at the Fermi energy by changing the quantum-well width. For the quantum-well structure with a two-unit-cell-thick LaNiO3 layer, we predict the coexistence of the type-II Dirac point and the closed nodal line. The results are analyzed and interpreted using a tight-binding model and symmetry arguments. Our findings offer a practical way to realize 2D type-II Dirac fermions in oxide heterostructures.
引用
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页数:5
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