Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer

被引:52
作者
Arata, Y. [1 ]
Nishinaka, H. [2 ]
Tahara, D. [1 ]
Yoshimoto, M. [2 ]
机构
[1] Kyoto Inst Technol, Dept Elect, Sakyo Ku, Kyoto 6068585, Japan
[2] Kyoto Inst Technol, Fac Elect Engn & Elect, Sakyo Ku, Kyoto 6068585, Japan
关键词
GALLIUM OXIDE; ALPHA; MOCVD;
D O I
10.1039/c8ce01128a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this study, single-phase epsilon-gallium oxide (Ga2O3) thin films were heteroepitaxially grown on c-plane sapphire substrates. When the Ga2O3 films were directly grown on c-plane sapphire substrates, they tended to grow with a mixture of -, -, and epsilon-Ga2O3. However, with the insertion of a cubic NiO buffer layer, single-phase epsilon-Ga2O3 thin films were successfully grown at temperatures from 400 degrees C to 800 degrees C. Furthermore, epsilon-Ga2O3 thin films grown at 750 degrees C exhibited a smooth surface. Transmission electron microscopy observations revealed that the (111) plane-oriented NiO buffer layer prevented the growth of both polymorphs other than epsilon-Ga2O3 and the intermediate layers. The direct bandgap was estimated to be 4.9 eV in thin films in which epsilon-Ga2O3 was predominant and 5.3 eV in thin films dominated by -Ga2O3.
引用
收藏
页码:6236 / 6242
页数:7
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