An ultra-wideband CMOS low noise-amplifier for 3-5-GHz UWB system

被引：317
作者：
Kim, CW [1 ]
Kang, MS
Anh, PT
Kim, HT
Lee, SG
机构：
[1] Informat & Commun Univ, Taejon 305600, South Korea
[2] Samsung Adv Inst Technol, Suwon 440600, South Korea
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2005年 / 40卷 / 02期
关键词：
broadband; CMOS; feedback; low noise amplifier; RF; ultra-wideband;
D O I：
10.1109/JSSC.2004.840951
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An ultra-wideband (UWB) CMOS low noise amplifier (LNA) topology that combines a narrowband LNA with a resistive shunt-feedback is proposed. The resistive shunt-feedback provides wideband input matching with small noise figure (NF) degradation by reducing the Q-factor of the narrowband LNA input and flattens the passband gain. The proposed UWB amplifier is implemented in 0.18-mum CMOS technology for a 3.1-5-GHz UWB system. Measurements show a -3-dB gain bandwidth of 2-4.6 GHz, a minimum NF of 2.3 dB, a power gain of 9.8 dB, better than -9 dB of input matching, and an input IP3 of -7 dBm, while consuming only 12.6 mW of power.
引用
收藏
页码：544 / 547
页数：4
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