Effect of N doping on the electron emission properties of diamondlike carbon film on a 2-in. Mo field emitter array panel

被引：10

作者：

Jung, JH ^{[1
]}

Ju, BK

Kim, H

Oh, MH

Chung, SJ

Jang, J

机构：

[1] KIST, Elect Mat & Devices Res Ctr, Seoul 130650, South Korea

[2] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.589886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the enhancement of field-emission characteristics by hydrogen-free nitrogen-doped diamondlike carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma-enhanced chemical vapor deposition. The Spindt-type molybdenum tip is used as an emission source without a resistive layer on the silicon substrate. The maximum emission current for each pixel was increased from 160 to 1520 mu A by a 20 nm N-doped DLC coating. Furthermore, the emission current from DLC-coated field emitter arrays (FEAs) is more stable than that of noncoated FEAs. (C) 1998 American Vacuum Society. [S0734-211X(98)07302-8].

引用

页码：705 / 709

页数：5

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