Organic vertical-channel transistors structured using excimer laser

Low-cost, large-area patterning of organic field-effect transistors with high-resolution is a subject of ongoing investigations. Here, we present a concept of patterning vertical-channels organic transistors using excimer laser. The channel length is controlled by the thickness of the dielectric polymer layer between the drain and source electrodes. We demonstrate that, by using this method, patterning of transistors with either metal or polymer contacts with resolutions as high as 2 mum is possible. Experimental data of vertical-channel pentacene transistors with either gold or poly (3,4-ethylenedioxythiophene) as drain-source contacts are reported. Field effect mobilities of 1x10(-3) and 3x10(-4) cm(2)/V s, respectively, have been measured in these devices. (C) 2004 American Institute of Physics.