Precise investigation of domain pinning energy in GaMnAs using planar Hall effect and magnetoresistance measurements

被引：26

作者：

Shin, D. Y. ^{[1
]}

Chung, S. J.

Lee, S.

Liu, X.

Furdyna, J. K.

机构：

[1] Korea Univ, Dept Phys, Seoul 136701, South Korea

[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2007年 / 43卷 / 06期

基金：

美国国家科学基金会; 新加坡国家研究基金会;

关键词：

(Ga; Mn)As; magnetic anisotropy; magnetic semiconductor; magnetoresistance; pinning energy; planar Hall effect;

D O I：

10.1109/TMAG.2007.894014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The planar Hall effect (PHE) and magnetoresistance (MR) measurements have been carried out on a GaMnAs ferromagnetic semiconductor. The PHE and MR spectra exhibit interesting two-step magnetization switching behavior arising from the magnetic anisotropy properties of the system. By fitting the angle-dependent planar Hall resistance (PHR) data taken at 5 kG with the Stoner-Wohlfarth model, the cubic and uniaxial anisotropy constants were independently obtained. The anisotropy constants lead to the precise determination of easy axis direction, which turns out to be in good agreement with the easy axis determined from the angular plot of the switching field. The domain pinning energies were further obtained by fitting the angle dependence of the switching field, including the effect of uniaxial anisotropy.

引用

页码：3025 / 3027

页数：3

共 11 条

[1] Anisotropic magnetoresistance in Ga1-xMnxAs -: art. no. 212407 [J].