Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

被引：6

作者：

Zhu, Qing ^{[1
,2
]}

Ma, Xiao-Hua ^{[1
,2
]}

Chen, Wei-Wei ^{[1
,2
]}

Hou, Bin ^{[1
,2
]}

Zhu, Jie-Jie ^{[1
,2
]}

Zhang, Meng ^{[1
,2
]}

Chen, Li-Xiang ^{[1
,2
]}

Cao, Yan-Rong ^{[3
]}

Hao, Yue ^{[2
]}

机构：

[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China

[2] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[3] Xidian Univ, Sch Mechanoelect Engn, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS B | 2016年 / 25卷 / 06期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN; hole-like traps; DLTS; surface states; ELECTRON-MOBILITY; DLTS SPECTRA; GAN; TRAPS;

D O I：

10.1088/1674-1056/25/6/067305

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of E-v + 0.47 eV, and E-v + 0.10 eV are observed, which are related to surface states. The electron traps with active energies of E-c - 0.56 eV are located in the channel, those with E-c - 0.33 eV and E-c - 0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state.

引用

页数：5

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