Comparison of trimethylgallium and triethylgallium for the growth of GaN

被引：42

作者：

Saxler, A

Walker, D

Kung, P

Zhang, X

Razeghi, M

Solomon, J

Mitchel, WC

Vydyanath, HR

机构：

[1] USAF,RES LAB,WRIGHT PATTERSON AFB,OH 45433

[2] AVYD DEVICES,COSTA MESA,CA 92626

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 22期

关键词：

D O I：

10.1063/1.120310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN films grown by low-pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared, The films were characterized by x-ray diffraction, Hall effect, photoluminescence, secondary ion mass spectroscopy and etch pit density measurements, GaN layers grown using triethylgallium exhibited superior electrical and optical properties and a lower carbon impurity concentration. (C) 1997 American Institute of Physics.

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页码：3272 / 3274

页数：3

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