Graphene destruction by metal-carbide formation: An approach for patterning of metal-supported graphene

被引：36

作者：

Lahiri, Jayeeta ^{[1
]}

Batzill, Matthias ^{[1
]}

机构：

[1] Univ S Florida, Dept Phys, Tampa, FL 33620 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期

关键词：

capacitance; chemical interdiffusion; elemental semiconductors; germanium; hafnium compounds; high-k dielectric thin films; interface states; lanthanum compounds; leakage currents; MOS capacitors; PHOTOELECTRON-SPECTROSCOPY; LARGE-AREA; NI(111); CARBON; DEPOSITION; FILMS; CO;

D O I：

10.1063/1.3464173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

With a combination of scanning tunneling microscopy, Auger electron spectroscopy and carbon monoxide titration the stability of graphene-Ni interfaces is investigated. Graphene supported on Ni(111) is stable to annealing temperature of 650 degrees C. However, if additional Ni is deposited on the surface it becomes unstable at already 100 degrees C and a surface-carbide is formed that allows the Ni deposit to penetrate the surface layer. Upon diffusion of all Ni deposits into the substrate, the graphene layer is reformed. The destruction of graphene by the formation of a carbide phase enables patterning of the graphene by controlled nickel deposition. (C) 2010 American Institute of Physics. [doi:10.1063/1.3464173]

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共 19 条

[11] The growth of thin Cu layers on Ni(111) studied by CO titration and photoelectron spectroscopy [J].

Koschel, H ;

Held, G ;

Steinrück, HP .

SURFACE SCIENCE, 2000, 453 (1-3) :201-213

[12]

Lahiri J, 2010, NAT NANOTECHNOL, V5, P326, DOI [10.1038/nnano.2010.53, 10.1038/NNANO.2010.53]

[13] Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils [J].

Li, Xuesong ;

Cai, Weiwei ;

An, Jinho ;

Kim, Seyoung ;

Nah, Junghyo ;

Yang, Dongxing ;

Piner, Richard ;

Velamakanni, Aruna ;

Jung, Inhwa ;

Tutuc, Emanuel ;

Banerjee, Sanjay K. ;

Colombo, Luigi ;

Ruoff, Rodney S. .

SCIENCE, 2009, 324 (5932) :1312-1314

[14] Deposition and FIB direct patterning of nanowires and nanorings into suspended sheets of graphene [J].

Lucot, D. ;

Gierak, J. ;

Ouerghi, A. ;

Bourhis, E. ;

Faini, G. ;

Mailly, D. .

MICROELECTRONIC ENGINEERING, 2009, 86 (4-6) :882-884

[15] Holey nanosheets by patterning with UV/ozone [J].

Nottbohm, Christoph T. ;

Wiegmann, Sebastian ;

Beyer, Andre ;

Goelzhaeuser, Armin .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2010, 12 (17) :4324-4328

[16] A direct transfer of layer-area graphene [J].

Regan, William ;

Alem, Nasim ;

Aleman, Benjamin ;

Geng, Baisong ;

Girit, Caglar ;

Maserati, Lorenzo ;

Wang, Feng ;

Crommie, Michael ;

Zettl, A. .

APPLIED PHYSICS LETTERS, 2010, 96 (11)

[17] Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition [J].

Reina, Alfonso ;

Jia, Xiaoting ;

Ho, John ;

Nezich, Daniel ;

Son, Hyungbin ;

Bulovic, Vladimir ;

Dresselhaus, Mildred S. ;

Kong, Jing .

NANO LETTERS, 2009, 9 (01) :30-35

[18] Structured epitaxial graphene growth on SiC by selective graphitization using a patterned AlN cap [J].

Rubio-Roy, Miguel ;

Zaman, Farhana ;

Hu, Yike ;

Berger, Claire ;

Moseley, Michael W. ;

Meindl, James D. ;

de Heer, Walt A. .

APPLIED PHYSICS LETTERS, 2010, 96 (08)

[19] Nucleation and growth of nickel nanoclusters on graphene Moireacute on Rh(111) [J].

Sicot, M. ;

Bouvron, S. ;

Zander, O. ;

Ruediger, U. ;

Dedkov, Yu. S. ;

Fonin, M. .

APPLIED PHYSICS LETTERS, 2010, 96 (09)