Graphene destruction by metal-carbide formation: An approach for patterning of metal-supported graphene

被引：36

作者：

Lahiri, Jayeeta ^{[1
]}

Batzill, Matthias ^{[1
]}

机构：

[1] Univ S Florida, Dept Phys, Tampa, FL 33620 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 02期

关键词：

capacitance; chemical interdiffusion; elemental semiconductors; germanium; hafnium compounds; high-k dielectric thin films; interface states; lanthanum compounds; leakage currents; MOS capacitors; PHOTOELECTRON-SPECTROSCOPY; LARGE-AREA; NI(111); CARBON; DEPOSITION; FILMS; CO;

D O I：

10.1063/1.3464173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

With a combination of scanning tunneling microscopy, Auger electron spectroscopy and carbon monoxide titration the stability of graphene-Ni interfaces is investigated. Graphene supported on Ni(111) is stable to annealing temperature of 650 degrees C. However, if additional Ni is deposited on the surface it becomes unstable at already 100 degrees C and a surface-carbide is formed that allows the Ni deposit to penetrate the surface layer. Upon diffusion of all Ni deposits into the substrate, the graphene layer is reformed. The destruction of graphene by the formation of a carbide phase enables patterning of the graphene by controlled nickel deposition. (C) 2010 American Institute of Physics. [doi:10.1063/1.3464173]

引用

页数：3

共 19 条

[1] CARBON AUGER LINESHAPES ON NI(111) SURFACE - EVIDENCE FOR NEW PHASES [J].