Simultaneous three-state lasing in quantum dot laser at room temperature

被引：13

作者：

Zhang, Z. Y. ^{[1
]}

Jiang, Q. ^{[1
]}

Hogg, R. A. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 16期

关键词：

Excited states - Nanocrystals - Semiconductor quantum dots - Ground state;

D O I：

10.1049/el.2010.1669

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first quantum dot laser under simultaneous three-state lasing operation at room temperature has been realised. The device exhibits ground state lasing at 1306 nm, the fist excited state lasing at 1213 nm and the second excited state lasing at 1152 nm synchronously. This is attributed to the long carrier relaxation time from higher energy levels to lower energy levels.

引用

页码：1155 / 1156

页数：2

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