Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs

被引：68

作者：

Asai, Hiroaki ^{[1
]}

Nashiyama, Isamu ^{[1
]}

Sugimoto, Kenji ^{[1
]}

Shiba, Kensuke ^{[1
]}

Sakaide, Yasuo ^{[1
]}

Ishimaru, Yasuo ^{[1
]}

Okazaki, Yuji ^{[1
]}

Noguchi, Kenta ^{[1
]}

Morimura, Tadaaki ^{[1
]}

机构：

[1] High Reliabil Engn & Components Corp HIREC, Tsukuba, Ibaraki 3050033, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 06期

关键词：

Insulated gate bipolar transistor (IGBT); power device; power MOSFET; Schottky barrier diode (SBD); silicon carbide (SiC); single-event burnout (SEB); spallation neutron; terrestrial neutron; SEB;

D O I：

10.1109/TNS.2014.2371892

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEB tolerance of SiC power MOSFETs against terrestrial neutrons is studied. It is shown that the failure probability increases exponentially with applied voltage and is several orders of magnitude lower than that of a Si MOSFET. The energetic secondary carbon atoms generated by the nuclear reactions and the collisions between the terrestrial neutrons and the lattice atoms of SiC devices may play important role in the SEB triggering mechanism in SiC power devices.

引用

页码：3109 / 3114

页数：6

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