ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

被引：51

作者：

Aubry, R. ^{[1
]}

Jacquet, J. C. ^{[1
]}

Oualli, M. ^{[1
]}

Patard, O. ^{[1
]}

Piotrowicz, S. ^{[1
]}

Chartier, E. ^{[1
]}

Michel, N. ^{[1
]}

Xuan, L. Trinh ^{[1
]}

Lancereau, D. ^{[1
]}

Potier, C. ^{[1
]}

Magis, M. ^{[1
]}

Gamarra, P. ^{[1
]}

Lacam, C. ^{[1
]}

Tordjman, M. ^{[1
]}

Jardel, O. ^{[1
]}

Dua, C. ^{[1
]}

Delage, S. L. ^{[1
]}

机构：

[1] III V Lab, F-91767 Palaiseau, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 05期

关键词：

GaN; high electron mobility transistor (HEMT); high-power; InAlN/GaN; Ka-band; microwave;

D O I：

10.1109/LED.2016.2540164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-frequency Metal Insulator Semiconductor High-Electron-Mobility Transistors (MIS HEMTs) were fabricated on quaternary InAlGaN/AlN/GaN heterostructures, grown by MOCVD on a 3" SiC substrate. Specific studies were performed on SiN ICP-CVD passivation layers. Improved performances were obtained with these optimized devices at 30 GHz as evidenced by CW Load Pull characterization: an output power of 6 W/mm and a power-added efficiency of 42%. A good extrinsic transconductance value higher than 450 mS/mm and a current density up to 1.55 A/mm were also measured on these transistors.

引用

页码：629 / 632

页数：4

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