Elastic Properties of GaN Nanowires: Revealing the Influence of Planar Defects on Young's Modulus at Nanoscale

被引：63
作者：
Dai, Sheng [1 ]
Zhao, Jiong [1 ]
He, Mo-rigen [1 ]
Wang, Xiaoguang [2 ,3 ]
Wan, Jingchun [2 ,3 ]
Shan, Zhiwei [2 ,3 ]
Zhu, Jing [1 ]
机构：
[1] Tsinghua Univ, Beijing Natl Ctr Electron Microscopy, State Key Lab New Ceram & Fine Proc, Lab Adv Mat,Sch Mat Sci & Engn, Beijing 100084, Peoples R China
[2] Xi An Jiao Tong Univ, Ctr Adv Mat Performance Nanoscale CAMP Nano, Xian 710049, Peoples R China
[3] Xi An Jiao Tong Univ, HARCC, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
来源：
NANO LETTERS | 2015年 / 15卷 / 01期
关键词：
GaN nanowires; in situ electron microscopy; elastic behavior; Young's modulus; planar defects; GALLIUM NITRIDE NANOWIRES; GRAIN-BOUNDARIES; TRANSITION; STRAIN; ARRAYS;
D O I：
10.1021/nl501986d
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The elastic properties of gallium nitride (GaN) nanowires with different structures were investigated by in situ electron microscopy in this work. The electric-field-induced resonance method was utilized to reveal that the single crystalline GaN nanowires, along [120] direction, had the similar Youngs modulus as the bulk value at the diameter ranging 92-110 nm. Meanwhile, the elastic behavior of the obtuse-angle twin (OT) GaN nanowires was disclosed both by the in situ SEM resonance technique and in situ transmission electron microscopy tensile test for the first time. Our results showed that the average Youngs modulus of these OT nanowires was greatly decreased to about 66 GPa and indicated no size dependence at the diameter ranging 98-171 nm. A quantitative explanation for this phenomenon is proposed based on the rules of mixtures in classical mechanics. It is revealed that the elastic modulus of one-dimensional nanomaterials is dependent on the relative orientations and the volume fractions of the planar defects.
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页码：8 / 15
页数：8
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