Microstructure evolution of hydrogen-implanted silicon during the annealing process

被引：8

作者：

Wang, J ^{[1
]}

Xiao, QH ^{[1
]}

Tu, HL ^{[1
]}

Shao, BL ^{[1
]}

Liu, AS ^{[1
]}

机构：

[1] Gen Res Inst NonFerrous Met, Beijing 100088, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 66卷 / 1-4期

关键词：

SOI; microstructure; hydrogen; HREM; smart-cut;

D O I：

10.1016/S0167-9317(02)00924-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microstructure evolution of a hydrogen-implanted Si(I I I) wafer during annealing was studied using transmission electron microscopy (TEM). In the damaged layer caused by hydrogen implantation before annealing, most defects are platelet-like and are located on (I It) planes. A few amorphous clumps and (100) plane defects are also present in the damaged layer. After annealing at 550 degreesC for 90 min, an amorphous layer is formed on the (111) plane and a micro-crack is generated. It is suggested that the micro-crack originates from the amorphous layer. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：314 / 319

页数：6

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