Fluidic assembly of hybrid MEMS: a GaAs-based microcantilever spin injector

被引:13
作者
Arscott, Steve [1 ]
Peytavit, Emilien [1 ]
Vu, Duong [2 ]
Rowe, Alistair C. H. [2 ]
Paget, Daniel [2 ]
机构
[1] Univ Lille, CNRS, IEMN, F-59652 Villeneuve Dascq, France
[2] Ecole Polytech, CNRS, F-91128 Palaiseau, France
关键词
TEMPERATURE-GROWN GAAS; GALLIUM-ARSENIDE; SURFACE; STICTION; ELECTRON; ADHESION; CANTILEVER; CONTACTS; DEVICES; SILICON;
D O I
10.1088/0960-1317/20/2/025023
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A proof-of-concept fluidic assembly of a hybrid MEMS GaAs microcantilever spin injector is presented here. Instead of monolithically forming MEMS from pre-deposited layers, we fabricate a hybrid MEMS by assembling pre-fabricated parts. Sub-millimetre sized patches of GaAs having a thickness of 3 mu m are pre-fabricated, as is a metalized fused silica support layer. The GaAs patches are manipulated and assembled onto the silica support using capillary forces; the resultant hybrid MEMS comprises a GaAs microcantilever on a robust fused silica support. A novel ohmic contact is demonstrated by bonding a GaAs patch (p-type carbon doped to 1 x 10(18) cm(-3)) onto the pre-metalized silica support layer prior to annealing; measurements revealed ohmic behaviour and a specific contact resistivity of similar to 10(-5) Omega cm. Preliminary investigations show that, when contacting the cantilever against a metallic or magnetic surface, injected photocurrents as large as several tens of nA can be obtained, for which the spin polarization is equal to 16%.
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页数:8
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共 57 条
  • [1] MICROFABRICATION OF CANTILEVER STYLI FOR THE ATOMIC FORCE MICROSCOPE
    ALBRECHT, TR
    AKAMINE, S
    CARVER, TE
    QUATE, CF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04): : 3386 - 3396
  • [2] Substrate transfer process for InP-based heterostructure barrier varactor devices
    Arscott, S
    Mounaix, P
    Lippens, D
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01): : 150 - 155
  • [3] MODELS FOR CONTACTS TO PLANAR DEVICES
    BERGER, HH
    [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &
  • [4] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
    BLAKEMORE, JS
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
  • [5] Spin-polarized scanning tunnelling microscopy
    Bode, M
    [J]. REPORTS ON PROGRESS IN PHYSICS, 2003, 66 (04) : 523 - 582
  • [6] ALLOYED OHMIC CONTACTS TO GAAS
    BRASLAU, N
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 803 - 807
  • [7] Wetting morphologies on substrates with striped surface domains
    Brinkmann, M
    Lipowsky, R
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) : 4296 - 4306
  • [8] Micromachined III-V cantilevers for AFM-tracking scanning hall probe microscopy
    Brook, AJ
    Bending, SJ
    Pinto, J
    Oral, A
    Ritchie, D
    Beere, H
    Springthorpe, A
    Henini, M
    [J]. JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2003, 13 (01) : 124 - 128
  • [9] Surface micromachining for microelectromechanical systems
    Bustillo, JM
    Howe, RT
    Muller, RS
    [J]. PROCEEDINGS OF THE IEEE, 1998, 86 (08) : 1552 - 1574
  • [10] PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCES
    CHEN, HD
    FENG, MS
    CHEN, PA
    LIN, KC
    WU, JW
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4A): : 1920 - 1927