Effect of Intersubband Interaction on Non-linear Electron Mobility in Asymmetric AlGaAs Parabolic Double Quantum Well Structure

被引:0
作者
Sahoo, Narayan [1 ]
Palo, Sangeeta [2 ]
Panda, Ajit K. [2 ]
Sahu, Trinath [2 ]
机构
[1] Berhampur Univ, Dept Elect Sci & Technol, Berhampur 760007, Odisha, India
[2] Natl Inst Sci & Technol, Dept Elect & Commun Engn, Palur Hills, Berhampur 761008, Odisha, India
来源
PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES KOLKATA CONFERENCE (IEEE EDKCON) | 2018年
关键词
double parabolic quantum well; intersubband interaction; resistance resonance; mobility; ENHANCEMENT; MODULATION; PROFILE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We study the effect of inter-subband interaction on nonlinear electron mobility mu in asymmetric AlGaAs parabolic double quantum well structure. We take into account the ionized impurity (imp-) and alloy disorder (al-) scatterings for calculation of mu. We keep well width w2 towards the surface side fixed and vary mu with well width w1 along the substrate. The mobility mu enhances with w1. As w1 increases, there is a change in the number of subbands occupied, i.e., single, double and again single. When double subband occupied the inter-subband interaction induces nonlinear behavior of mu as a function of w1. This is due to the cusp like the fluctuation of imp- and al-intersubband scattering rate matrix elements.
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收藏
页码:148 / 151
页数:4
相关论文
共 15 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]   Nanometre-scale electronics with III-V compound semiconductors [J].
del Alamo, Jesus A. .
NATURE, 2011, 479 (7373) :317-323
[3]   Carrier transport in high-mobility III-V quantum-well transistors and performance impact for high-speed low-power logic applications [J].
Dewey, Gilbert ;
Hudait, Mantu K. ;
Lee, Kangho ;
Pillarisetty, Ravi ;
Rachmady, Willy ;
Radosavljevic, Marko ;
Rakshit, Titash ;
Chau, Robert .
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (10) :1094-1097
[4]   ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667
[5]   Theoretical and experimental study of optical gain and linewidth enhancement factor of type-I quantum-cascade lasers [J].
Kim, J ;
Lerttamrab, M ;
Chuang, SL ;
Gmachl, C ;
Sivco, DL ;
Capasso, F ;
Cho, AY .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (12) :1663-1674
[6]   Effect of doping profile on multisubband electron mobility in AlGaAs parabolic quantum well structures [J].
Palo, S. ;
Sahoo, N. ;
Sahu, T. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2014, 64 :33-38
[7]   Mobility modulation in inverted delta doped coupled double quantum well structure [J].
Sahoo, N. ;
Sahu, T. .
PHYSICA B-CONDENSED MATTER, 2016, 498 :49-54
[8]   Multisubband electron mobility in a parabolic quantum well structure under the influence of an applied electric field [J].
Sahoo, N. ;
Sahu, T. .
JOURNAL OF SEMICONDUCTORS, 2014, 35 (01)
[9]   Oscillation of electron mobility in parabolic double quantum well structure due to applied electric field [J].
Sahoo, Narayan ;
Sahu, Trinath .
AIP ADVANCES, 2014, 4 (12)
[10]   Electric field induced oscillating electron mobility in asymmetric wide GaAs/AlxGa1-xAs quantum well structure [J].
Sahoo, Narayan ;
Sahu, Trinath .
JOURNAL OF APPLIED PHYSICS, 2014, 116 (04)