Hydrogen doping in HfO2 resistance change random access memory

被引：27

作者：

Duncan, D. ^{[1
]}

Magyari-Koepe, B. ^{[1
]}

Nishi, Y. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 04期

基金：

美国国家科学基金会;

关键词：

OXYGEN VACANCY; OXIDE; DEFECTS;

D O I：

10.1063/1.4940369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structures and energies of hydrogen-doped monoclinic hafnium dioxide were calculated using density-functional theory. The electronic interactions are described within the LDA + U formalism, where on-site Coulomb corrections are applied to the 5d orbital electrons of Hf atoms and 2p orbital electrons of the O atoms. The effects of charge state, defect-defect interactions, and hydrogenation are investigated and compared with experiment. It is found that hydrogenation of HfO2 resistance-change random access memory devices energetically stabilizes the formation of oxygen vacancies and conductive vacancy filaments through multiple mechanisms, leading to improved switching characteristic and device yield. (C) 2016 AIP Publishing LLC.

引用

页数：5

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