Efficient Deep Red Light-Sensing All-Polymer Phototransistors with p-type/n-type Conjugated Polymer Bulk Heterojunction Layers

Here we demonstrate deep red light-sensing all-polymer phototransistors with bulk heterojunction layers of poly[4,8-bis[(2-ethylhexyl)-oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]-thiophenediyl] (PTB7) and poly[[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)] (P(NDI2OD-T2)). The device performances were investigated by varying the incident light intensity of the deep red light (675 nm), while the signal amplification capability was examined by changing the gate and drain voltages. The result showed that the present all-polymer phototransistors exhibited higher photoresponsivity (similar to 14 A/W) and better on/off photoswitching characteristics than the devices with the pristine polymers under illumination with the deep red light. The enhanced phototransistor performances were attributed to the well-aligned nanofiber-like morphology and nanocrystalline P(NDI2OD-T2) domains in the blend films, which are beneficial for charge separation and charge transport in the in-plane direction.