Gate-tunable valley-filter based on suspended graphene with double magnetic barrier structures

被引：7
作者：
Myoung, Nojoon [1 ,2 ]
Ihm, Gukhyung [2 ]
机构：
[1] Chungnam Natl Univ, Inst Quantum Syst, Taejon 305764, South Korea
[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
来源：
CURRENT APPLIED PHYSICS | 2014年 / 14卷 / 11期
基金：
新加坡国家研究基金会;
关键词：
Graphene; Valley filter; Strain engineering; Inhomogeneous magnetic fields;
D O I：
10.1016/j.cap.2014.08.004
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We theoretically investigate the effects of strain-induced pseudomagnetic fields on the transmission probability and the ballistic conductance for Dirac fermion transport in suspended graphene. We show that resonant tunneling through double magnetic barriers can be tuned by strain in the suspended region. The valley-resolved transmission peaks are apparently distinguishable owing to the sharpness of the resonant tunneling. With the specific strain, the resonant tunneling is completely suppressed for Dirac fermions occupying the one valley, but the resonant tunneling exists for the other valley. The valley-filtering effect is expected to be measurable by strain engineering. The proposed system can be used to fabricate a graphene valley filter with the large valley polarization almost 100%. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：1455 / 1459
页数：5
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