Photoluminescence origin of lightly doped silicon nanowires treated with acid vapor etching

被引：4
作者：
Amri, Chohdi [1 ]
Ezzaouia, Hatem [1 ]
Ouertani, Rachid [2 ]
机构：
[1] Res & Technol Ctr Energy, Lab Semicond Nanostruct & Adv Technol, Sci & Technol Pk,Route Tourist Soliman, Hammam Lif 2050, Tunisia
[2] Res & Technol Ctr Energy, Lab Nanomat & Renewable Energy Syst, Sci & Technol Pk,Route Tourist Soliman, Hammam Lif 2050, Tunisia
来源：
CHINESE JOURNAL OF PHYSICS | 2020年 / 63卷
关键词：
Porous silicon nanowires; Acid vapor etching; Quantum confinement; Photoluminescence; Multilevel model; OPTO-ELECTRIC PROPERTIES; POROUS SILICON; QUANTUM DOTS; ARRAYS; LUMINESCENCE; DEPENDENCE; MECHANISM; SPECTRA; WIRES;
D O I：
10.1016/j.cjph.2019.12.008
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this work, we carry out a comprehensive photoluminescence (PL) study to elucidate the origin of light emission from porous silicon nanowires (pSiNWs). SiNWs were first grooved in lightly doped Si wafer by silver assisted chemical etching, and then treated with an acid vapor emanating from HF/HNO3 aqueous solution heated at 60 degrees C. Scanning and transmission electron microscopies were used to investigate the effect of the acid vapor etching on morphological properties of SiNWs. The as prepared pSiNWs exhibited a strong room temperature PL emission centered at 1.93 eV. An increase of the PL intensity was observed with the increase of HNO3 in the acid solution. By varying the laser excitation density from 60 to 300 W/cm(2), we shed the light on the radiative recombination modes occurring within the Si nanocrystals (SiNCs) generated along the pSiNWs. We study as well the temperature-dependent PL of the pSiNWs in the range 10 to 300 K. Based on both laser excitation density and temperature-dependent PL, we propose a multilevel transition scheme resuming the PL origin taking into account the size distribution, shape and surface states of the SiNCs trimming the wire sidewalls.
引用
收藏
页码：325 / 336
页数：12
相关论文
共 35 条
[1]   Enhancement of silicon nanowire opto-electric properties by combining acid vapor etching and lithium pore-filling [J].
Amri, Chohdi ;
Ouertani, Rachid ;
Hamdi, Abderrahamn ;
Ezzaouia, Hatem .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (18) :13426-13435
[2]   Effect of porous layer engineered with acid vapor etching on optical properties of solid silicon nanowire arrays [J].
Amri, Chohdi ;
Ouertani, Rachid ;
Hamdi, Abderrahmean ;
Chtourou, Radhouane ;
Ezzaouia, Hatem .
MATERIALS & DESIGN, 2016, 111 :394-404
[3]   Effect of acid vapor etching on morphological and opto-electric properties of flat silicon and silicon nanowire arrays: A comparative study [J].
Amri, Chohdi ;
Ouertani, Rachid ;
Hamdi, Abderrahmen ;
Ezzaouia, Hatem .
SUPERLATTICES AND MICROSTRUCTURES, 2016, 91 :278-289
[4]   Structural and luminescence properties of vapour-etched porous silicon and related compounds [J].
Aouida, S ;
Saadoun, M ;
Ben Saad, K ;
Bessaïs, B .
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 9, 2005, 2 (09) :3409-3413
[5]   Influence of metallic catalyst and doping level on the metal assisted chemical etching of silicon [J].
Backes, A. ;
Bittner, A. ;
Leitgeb, M. ;
Schmid, U. .
SCRIPTA MATERIALIA, 2016, 114 :27-30
[6]   Anodisation-related structural variations of porous silicon nanostructures investigated by photoluminescence and Raman spectroscopy [J].
Ben Younes, O ;
Oueslati, M ;
Bessaïs, B .
APPLIED SURFACE SCIENCE, 2003, 206 (1-4) :37-45
[7]   Correlation of photoluminescence spectra and structure of porous silicon [J].
Bessais, B ;
Ezzaouia, H ;
Elhouichet, H ;
Oueslati, M ;
Bennaceur, R .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (12) :1815-1820
[8]   Size-dependent electron-hole exchange interaction in Si nanocrystals [J].
Brongersma, ML ;
Kik, PG ;
Polman, A ;
Min, KS ;
Atwater, HA .
APPLIED PHYSICS LETTERS, 2000, 76 (03) :351-353
[9]   LUMINESCENT ANODIZED SILICON AEROCRYSTAL NETWORKS PREPARED BY SUPERCRITICAL DRYING [J].
CANHAM, LT ;
CULLIS, AG ;
PICKERING, C ;
DOSSER, OD ;
COX, TI ;
LYNCH, TP .
NATURE, 1994, 368 (6467) :133-135
[10]   Metal-assisted chemical etching of silicon in HF-H2O2 [J].
Chartier, C. ;
Bastide, S. ;
Levy-Clement, C. .
ELECTROCHIMICA ACTA, 2008, 53 (17) :5509-5516
1234