Effects of thermal annealing on light-emitting devices based on fluorene-copolymers with thiophene and ethylenedioxythienylene
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作者:
Niu, YH
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S China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R ChinaS China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R China
Niu, YH
[1
]
Hou, Q
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S China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R ChinaS China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R China
Hou, Q
[1
]
Yuan, M
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S China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R ChinaS China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R China
Yuan, M
[1
]
Cao, Y
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S China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R ChinaS China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R China
Cao, Y
[1
]
机构:
[1] S China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R China
Thermal annealing of polymer light-emitting diodes with structure of ITO/PEDOT:PSS/copolyfluorene/Ba/Al was done at different temperatures via different time. It was found that annealing just below the glass transition temperature of the copolymer could enhance the device performance a great deal. Lower turn on voltage, higher maximum brightness and higher EL quantum efficiency could be achieved with no change in the EL spectra. Changes both in the "bulk" EL layer and at the interfaces during the annealing are discussed.
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页码:477 / 478
页数:2
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