Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers

被引：26

作者：

Das, A. ^{[1
]}

Magalhaes, S. ^{[2
]}

Kotsar, Y. ^{[1
]}

Kandaswamy, P. K. ^{[1
]}

Gayral, B. ^{[1
]}

Lorenz, K. ^{[2
]}

Alves, E. ^{[2
]}

Ruterana, P. ^{[3
]}

Monroy, E. ^{[1
]}

机构：

[1] CEA Grenoble, CMRS Grp Nanophys & Semicond, INAC SP2M NPSC, CEA, F-38054 Grenoble 9, France

[2] Inst Tecnol & Nucl, Unidade Fis & Aceleradores, P-2686953 Sacavem, Portugal

[3] CIMAP, UMR CNRS ENSICAEN 6252, F-14050 Caen, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 18期

关键词：

crystal orientation; gallium compounds; III-V semiconductors; indium compounds; molecular beam epitaxial growth; plasma deposition; polar semiconductors; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; GROWTH;

D O I：

10.1063/1.3427310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth kinetics of semipolar (11-22) InGaN layers by plasma-assisted molecular beam epitaxy. Similarly to (0001)-oriented InGaN, optimum growth conditions for this crystallographic orientation correspond to the stabilization of two atomic layers of In on the growing InGaN surface, and the limits of this growth window in terms of substrate temperature and In flux lie at same values for both polar and semipolar material. However, in semipolar samples, the incorporation of In is inhibited, even for growth temperatures within the Ga-limited regime of polar InGaN growth. (C) 2010 American Institute of Physics. [doi:10.1063/1.3427310]

引用

页数：3

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