Efficient current-induced domain-wall displacement in SrRuO3

被引：41

作者：

Feigenson, Michael ^{[1
]}

Reiner, James W.

Klein, Lior

机构：

[1] Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel

[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.98.247204

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate current-induced displacement of ferromagnetic domain walls in submicrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic field and its direction is reversed when the current is reversed. We find that current density in the range of 10(9)-10(10) A/m(2) is sufficient for domain-wall displacement when the depinning field varies between 50 to 500 Oe. These results indicate relatively high efficiency of the current in displacing domain walls which we believe is related to the narrow width (similar to 3 nm) of domain walls in this compound.

引用

页数：4

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