Formation of Co ultrathin films on Si(111): Growth mechanisms, electronic structure and transport

被引:3
作者
Plusnin, N. I. [1 ]
Il'yashenko, V. M. [1 ]
Kitan, S. A. [1 ]
Krylov, S. V. [1 ]
机构
[1] Vladivostok State Univ Econ & Serv, Vladivostok 690990, Russia
关键词
Auger electron spectroscopy; electron energy loss spectroscopy; growth; electron structure; electrical conductivity; Co; Si(111);
D O I
10.1016/j.apsusc.2007.03.001
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The AES, EELS, AFM and resistance measurement investigations have been performed to determine the growth mechanism, electronic structure and resistance-thickness dependence of Co layers on silicon at the thickness range from submonolayer up to several monolayer coverage. These layers were obtained under UHV high-rate deposition with using re-evaporation of Co from a Ta foil. The layer-by-layer growth of Co on Si(I 1 1) with some light segregation of Si has been found on the AES data. An enlarged and reduced concentration of valence electrons in the interface Si layer at the thickness ranges 0-1 angstrom and in the Co film at d = 1-2 angstrom. has been observed. Resistance measurement of the Co film showed a fast decrease of the resistance down to some value limited by quantum-size effect in accordance with the formation of a two-dimensional Co phase at d = 1-2 angstrom (c) 2007 Elsevier B. V. All rights reserved.
引用
收藏
页码:7225 / 7229
页数:5
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