Synthesis and Directed Self-Assembly of Modified PS-b-PMMA for Sub-10 nm Nanolithography

被引：5
|
作者：
Li, Xuemiao [1 ]
Li, Jie [1 ]
Deng, Hai [1 ]
机构：
[1] Fudan Univ, Dept Macromol Sci, State Key Lab Mol Engn Polymers, Shanghai 200433, Peoples R China
来源：
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2017年 / 30卷 / 01期
关键词：
Copolymer lithography; DSA materials; Sub-10; nm; Rapid self-assembly; BLOCK-COPOLYMERS; GRAPHOEPITAXY; POLYMERS;
D O I：
10.2494/photopolymer.30.83
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
The directed self-assembly (DSA) of block copolymers has attracted a great deal of interest due to its potential applications in sub-10 nm lithography. The conventional organic organic DSA materials such as poly[styrene-block-(methyl methacrylate)] (PS-b-PMMA) have been extensively studied, however, the low etch contrast between two blocks and the difficulty to reduce L-0 (ca. 28 nm) limit its application. In this study, we designed and synthesized the novel DSA materials based on PS-b-PMMA. Through the modifying of acrylics part, segment segment interaction parameter (chi) can be significantly increased, which leads to rapid self-assembly and high etch contrast. These block copolymers show the potential as DSA material with high intrinsic resolution for sub-10 nm and beyond nodes.
引用
收藏
页码：83 / 86
页数：4
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