Effect of microwave radiation on the properties of Ta2O5-simicrostructures

被引:17
作者
Atanassova, E
Konakova, RV
Mitin, VF
Koprinarova, J
Lytvym, OS
Okhrimenko, OB
Schinkarenko, VV
Virovska, D
机构
[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
[2] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine
基金
美国国家科学基金会;
关键词
D O I
10.1016/j.microrel.2004.04.018
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The paper presents results of the effect of microwave irradiation at room temperature on the properties of thin layers of tantalum pentoxide deposited on Si by rf sputtering. Electrical characterization is performed in conjunction with Auger electron spectroscopy and atomic force microscopy. Among exposure times used (1; 5; 10 s), treatment of about 5 s shows the best promise as an annealing step-an improvement of number of parameters of the system Ta2O5-Si is established (dielectric constant and surface morphology; stoichiometry and microstructure of both the bulk oxide and the interfacial transition region; electrical characteristics in terms of oxide charge density, leakage current and breakdown fields). At the same time the microwave irradiation is not accompanied by crystalization effects in Ta2O5 and/or additional oxidation of Si substrate. It is concluded that the short-time microwave irradiation can be used as an annealing process for Ta2O5-Si microstructures and it has a potential to replace the high-temperature annealing processes for high-k insulators. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:123 / 135
页数:13
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