Multilevel memory and artificial synaptic plasticity in P(VDF-TrFE)-based ferroelectric field effect transistors

Multilevel data memory and artificial synaptic plasticity in poly(vinylidene fluoride-co-trifluoroethylene) [P (VDF-TrFE)] ferroelectric field effect transistors were demonstrated. The dynamics of ferroelectric polarization transformation modulate potential of transistor channel, and adjust the electric field of the P(VDF-TrFE) ferroelectric film by potential along channel direction, thus realizing the multilevel nonvolatile memory state. The artificial synaptic plasticity of transistor is simulated, and the long-term plasticity of excited/inhibited post synaptic current, paired impulse facilitation/inhibition, and spike-rate-dependent plasticity is realized. In longterm potentiation/depression simulation of devices, the conductivity symmetry and linearity are improved by setting the amplitude of the pulse increments. In addition, the vector-matrix multiplication operation was performed in a crossbar array. This work demonstrates the scheme to develop the P(VDF-TrFE) transistors-based multilevel memory and neural morphological computing.