Phase Changes of 4H-SiC in Excimer Laser Doping

To understand the mechanism of laser doping by a KrF excimer laser, we have experimentally evaluated the structural changes of 4H-SiC in the doping-capable region (the region where ablation does not occur and the temperature does not exceed the peritectic temperature). In the previous report, the calculation result assuming that the crystal state of SiC may change due to laser irradiation even in the doping-capable region was reported. In this study, it is experimentally confirmed that the phase change of 4H-SiC depends on the volume density of the total number of photons by laser irradiation even before ablation conditions. As a result, it was found that the model of the phase change of 4H-SiC in excimer laser doping can be considered as the synthesis of state change by photomechanical reaction in addition to photothermal and photochemical reactions.