Colloidal III-V Quantum Dot Photodiodes for Short-Wave Infrared Photodetection

被引:62
作者
Leemans, Jari [1 ]
Pejovic, Vladimir [2 ]
Georgitzikis, Epimitheas [2 ]
Minjauw, Matthias [3 ]
Siddik, Abu Bakar [2 ]
Deng, Yu-Hao [1 ]
Kuang, Yinghuan [2 ]
Roelkens, Gunther [4 ]
Detavernier, Christophe [3 ]
Lieberman, Itai [2 ]
Malinowski, Pawel E. [2 ]
Cheyns, David [2 ]
Hens, Zeger [1 ]
机构
[1] Univ Ghent, Phys & Chem Nanostruct, Krijgslaan 281-S3, B-9000 Ghent, Belgium
[2] Imec Vzw, Kapeldreef 75, B-3001 Leuven, Belgium
[3] Univ Ghent, Dept Solid State Sci, Krijgslaan 281-S1, B-9000 Ghent, Belgium
[4] Univ Ghent, Photon Res Grp, Technol Pk Zwijnaarde 126, B-9052 Ghent, Belgium
关键词
InAs quantum dots; infrared sensing; printed photonics; SOLAR-CELLS; THIN-FILMS; NANOCRYSTALS; PROSPECTS; SURFACE;
D O I
10.1002/advs.202200844
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Short-wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD-SWIR imagers is, however, hampered by a reliance on restricted elements such as Pb and Hg. Here, QD photodiodes, the central element of a QD image sensor, made from non-restricted In(As,P) QDs that operate at wavelengths up to 1400 nm are demonstrated. Three different In(As,P) QD batches that are made using a scalable, one-size-one-batch reaction and feature a band-edge absorption at 1140, 1270, and 1400 nm are implemented. These QDs are post-processed to obtain In(As,P) nanocolloids stabilized by short-chain ligands, from which semiconducting films of n-In(As,P) are formed through spincoating. For all three sizes, sandwiching such films between p-NiO as the hole transport layer and Nb:TiO2 as the electron transport layer yields In(As,P) QD photodiodes that exhibit best internal quantum efficiencies at the QD band gap of 46 +/- 5% and are sensitive for SWIR light up to 1400 nm.
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页数:8
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