S-band high-power voltage controlled oscillator

被引：0

作者：

Lei, C ^{[1
]}

Yi, S ^{[1
]}

机构：

[1] Informat Ind Minist, Nanjing Elect Device Inst, Nanjing 210016, Peoples R China

来源：

2000 2ND INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS | 2000年

关键词：

oscillator; low phase noise; high reliability;

D O I：

10.1109/ICMMT.2000.895609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the theory, architecture, features and design of S-Band High-Power Voltage controlled Oscillator. The components consists of Si-Bi-Polar Transistor, common-Base integrated oscillating circuits and tuning varactor. The fringe experience results is given.

引用

页码：21 / 24

页数：4