In Situ Gamma Radiation-Induced Attenuation in Sapphire Optical Fibers Heated to 1000°C

被引:13
作者
Petrie, Christian M. [1 ]
Wilson, Brandon [1 ]
Blue, Thomas E. [1 ]
机构
[1] Ohio State Univ, Dept Mech & Aerosp Engn, Nucl Engn Program, Columbus, OH 43210 USA
关键词
SINGLE-CRYSTAL AL2O3; LATTICE-DEFECTS; HOLE-CENTERS; LUMINESCENCE; ALPHA-AL2O3;
D O I
10.1111/jace.13089
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The purpose of this work was to determine the suitability of using instrumentation utilizing sapphire optical fibers in a high-temperature gamma radiation environment. In this work, the broadband (500-2200nm, or 0.56-2.48eV) optical attenuation of commercially available sapphire optical fibers was monitored in situ during continuous gamma irradiation from room temperature up to 1000 degrees C. The gamma dose rate of the irradiation facility was measured to be 370rad/h (dose in sapphire). Results show rapid growth of an absorption band centered below 500nm (the minimum detectable wavelength in this work) and extending as far as similar to 1000nm that reached a dynamic equilibrium after approximately 4h of irradiation at room temperature. Increasing temperature generally reduced the added attenuation, although the added attenuation came to a nonzero equilibrium at temperatures of 1000 degrees C and below. No peaks in the added attenuation were observed above 1000nm, and the added attenuation at 1300 and 1550nm remained less than 0.7dB throughout the entire experiment. Fitting the attenuation spectra to Gaussian functions at each temperature revealed a large absorption band near 3eV that monotonically decreased both in magnitude and width with increasing temperature. A second smaller band near 1.73eV monotonically increased in both magnitude and width with increasing temperature, suggesting that some interconversion between defects may be occurring at higher temperatures.
引用
收藏
页码:3150 / 3156
页数:7
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