Ultra-low power 90nm 6T SRAM cell for wireless sensor network applications

被引：0

作者：

Ho, D. ^{[1
]}

Iniewski, K. ^{[2
]}

Kasnavi, S. ^{[2
]}

Ivanov, A. ^{[1
]}

Natarajan, S. ^{[2
,3
]}

机构：

[1] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V5Z 1M9, Canada

[2] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2M7, Canada

[3] Emerging Mem Technol Inc, Ottawa, ON, Canada

来源：

2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, PROCEEDINGS | 2006年

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a comparative study of leakage reduction techniques applied to a 90nm 6T SRAM to find an optimal design for ultra-low power wireless sensor applications. A 4-Kb SRAM implemented with the proposed techniques has a leakage as low as 26.5nA in the idle mode, a 189X improvement over a memory without applying such techniques.

引用

页码：4131 / +

页数：2

共 10 条

[1] [Anonymous], 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, DOI DOI 10.1109/ISSCC.2005.1494036
[2] CSERVENY S, IN PRESS IEEE T CIRC
[3] EKANAYAKE V, 2004, P 11 INT C ARCH SUPP
[4] Sizing consideration for leakage control transistor
Farbiz, F
Farazian, M
Emadi, M
Sadeghi, K
[J]. 17TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS: DESIGN METHODOLOGIES FOR THE GIGASCALE ERA, 2004, : 639 - 641
[5] INIEWSKI K, 2005, INT C INF COMM TECHN
[6] Kim N., 2004, IEEE T VERY LARGE SC, V12
[7] Qin HF, 2004, ISQED 2004: 5TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, PROCEEDINGS, P55
[8] Romanovsky S., 2004, P 17 INT C VLSI DES
[9] Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits
Roy, K
Mukhopadhyay, S
Mahmoodi-Meimand, H
[J]. PROCEEDINGS OF THE IEEE, 2003, 91 (02) : 305 - 327
[10] Zhang K., 2005, IEEE J SOLID STATE C, V40

← 1 →