Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates

被引：12

作者：

Asif, Fatima ^{[1
]}

Lachab, Mohamed ^{[2
]}

Coleman, Antwon ^{[1
]}

Ahmad, Iftikhar ^{[2
]}

Zhang, Bin ^{[2
]}

Adivarahan, Vinod ^{[2
]}

Khan, Asif ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29201 USA

[2] Nitek Inc, Columbia, SC 29201 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2014年 / 32卷 / 06期

关键词：

LIGHT-EMITTING-DIODES; ALN;

D O I：

10.1116/1.4898694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low threshold optical power density of 240 kW/cm(2) is achieved for room temperature stimulated emission at 276 nm in AlGaN/AlGaN multiple quantum well (MQW) structures over AlN/sapphire templates. The heterostructures were grown by low-pressure metalorganic chemical vapor deposition whereas a pulsed ArF excimer laser (lambda(exc) = 193 nm) was used as the pumping source for photoluminescence measurements in edge configuration. The light emitted from the MQWs above threshold exhibits a minimum linewidth of 1.2 nm and is dominated by transverse electric polarization above threshold. The optical confinement factor in the active region was calculated to be about 2%. (C) 2014 American Vacuum Society.

引用

页数：5

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