Neuron Function with Single Device by using "PN-Body Tied SOI-FET" -Mimicking Leaky Integrate and Fire Characteristics-

被引:2
作者
Sasaki, Toru [1 ]
Mori, Takayuki [1 ]
Ida, Jiro [1 ]
机构
[1] Kanazawa Inst Technol, Kanazawa, Ishikawa, Japan
来源
6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022) | 2022年
关键词
Leaky integrate-and-fire neuron; Neuron circuit; Positive feedback; Spiking neural network and Steep subthreshold slope;
D O I
10.1109/EDTM53872.2022.9798135
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A neuromorphic chip using a spiking neural network is one candidate for a low-power neural network system. Conventional neuron circuits need a comparator and a capacitor. Reducing the circuit area is one of the challenges. In order to reduce it, we have been researching the neuron function with a single device by using the PN-body tied (PNBT) SOI-FET. In this study, we explored the "leaky" and "integrate" characteristics of the actual single device and found that the PNBT SOI-FET can reproduce neuron-like behavior.
引用
收藏
页码:291 / 293
页数:3
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