Effects of oxygen vacancy diffusion on leakage characteristics of Pt/(Ba0.5Sr0.5)TiO3/Pt capacitor

被引：12
作者：
Maruno, S
Murao, T
Kuroiwa, T
Mikami, N
Tomikawa, A
Nagata, M
Yasue, T
Koshikawa, T
机构：
[1] Mitsubishi Elect Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan
[2] Osaka Electrocommun Univ, Fundamental Elect Res Inst, Neyagawa, Osaka 5728530, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 5A期
关键词：
Ba1-xSrxTiO3; thin film; electrical conduction; Schottky emission; oxygen vacancy;
D O I：
10.1143/JJAP.39.L416
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated leakage characteristics of Pt/(Ba0.5Sr0.5)TiO3(BST)/Pt capacitors by measuring current-voltage characteristics during annealing in vacuum and atmosphere. Built-in electric fields (E-i) generated at Pt/BST interfaces are derived from analysis of the leakage currents based on the Schottky conduction mechanism. It was found that E-i varies in proportion to the square root of annealing time (root t). In addition, we found that an external electric field applied during annealing in a vacuum induces asymmetric degradation in the leakage characteristics at the top and bottom Pt/BST interfaces. Such behavior in the leakage characteristics is interpreted in terms of the diffusion of oxygen vacancies at the interfaces. Diffusivity of oxygen vacancies is determined from E-i - root t curves.
引用
收藏
页码：L416 / L419
页数：4
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