Double crystal X-ray diffraction study of MBE self-organized InAs quantum dots

被引：0

作者：

Wang, YT ^{[1
]}

Zhuang, Y

Ma, WQ

Wang, W

Yang, XP

Chen, ZG

Jiang, DS

Zheng, HZ

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Beijing Lab Superlattice & Microstruct, Beijing 100083, Peoples R China

来源：

SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY | 1998年 / 41卷 / 02期

关键词：

quantum dots; X-ray diffraction; dynamic theory;

D O I：

10.1007/BF02897442

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

A series of GaAs/InAs/GaAs samples were studied by double crystal X-ray diffraction and the X-ray dynamic theory was used to analyze the X-ray diffraction results. As the thickness of InAs layer exceeds 1.7 monolayer, 3-dimensional InAs islands appear. Pendellosung fringes shifted. A multilayer structure model is proposed to describe the strain status in the InAs islands of the sample and a good agreement is obtained between the experimental and theoretical curves.

引用

页码：172 / 176

页数：5

共 12 条

[1] MECHANISMS OF STRAINED ISLAND FORMATION IN MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(100) [J].

CHEN, P ;

XIE, Q ;

MADHUKAR, A ;

CHEN, L ;

KONKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2568-2573

[2]

EAGESHAM DJ, 1990, PHYS REV LETT, V64, P1943

[3]

KITABAYASHI H, 1995, J CRYST GROWTH, V150, P152

[4]

Krost A, 1996, APPL PHYS LETT, V68, P785, DOI 10.1063/1.116532

[5] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS [J].

MARZIN, JY ;

GERARD, JM ;

IZRAEL, A ;

BARRIER, D ;

BASTARD, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (05) :716-719

[6]

MAZUELAS A, 1992, MATER RES SOC SYMP P, V263, P473, DOI 10.1557/PROC-263-473

[7] NEAR-1.3-MU-M HIGH-INTENSITY PHOTOLUMINESCENCE AT ROOM-TEMPERATURE BY INAS/GAAS MULTI-COUPLED QUANTUM DOTS [J].

TACKEUCHI, A ;

NAKATA, Y ;

MUTO, S ;

SUGIYAMA, Y ;

INATA, T ;

YOKOYAMA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (4A) :L405-L407

[8] MONOLAYER RESOLUTION BY MEANS OF X-RAY INTERFERENCE IN SEMICONDUCTOR HETEROSTRUCTURES [J].

TAPFER, L ;

OSPELT, M ;

VONKANEL, H .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (03) :1298-1301

[9] Self-organization in growth of quantum dot superlattices [J].

Tersoff, J ;

Teichert, C ;

Lagally, MG .

PHYSICAL REVIEW LETTERS, 1996, 76 (10) :1675-1678

[10]

XIE QH, 1995, J CRYST GROWTH, V150, P357, DOI 10.1016/0022-0248(94)00776-4

← 1 2 →