MILLIMETER-WAVE CMOS POWER AMPLIFIER BASED ON TAPERED DEVICE SIZING FOR HIGH EFFICIENCY USING STANDARD DIGITAL CMOS

被引：1

作者：

Lee, Jong-Wook ^{[1
]}

Lee, Seong-Gwon ^{[1
]}

机构：

[1] Kyung Hee Univ, Sch Elect & Informat, Suwon 446701, South Korea

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2010年 / 52卷 / 03期

关键词：

multimeter-wave; Q-band; CMOS; power amplifier; efficiency;

D O I：

10.1002/mop.24958

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-efficiency Q-band CMOS power amplifier was fabricated using a 0 13 mu m standard CMOS process with six layers of copper metallization To achieve high efficiency, a tapered device sizing technique was. employed with a common-source transistor rather than a cascade configuration Wing tapered device sizing. DC power (consumption was reduced by using small size transistors in the driver Stage while maintaining the overall amplifier gain and output power Therefore. a good figure of merit including high efficiency as obtained The amplifier achieved a 15 2 dB small-signal gain. 75 dBm output power and 9 2% power-added-efficiency at 36 5 GHz in a compact chip area 0.3 mm(2) (C) 2010 Wiley Periodicals. Inc Microwave Opt Technol Lett 52 514-518. 2010, Published online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.24958

引用

页码：514 / 518

页数：5

共 9 条

[1] Frequency-independent equivalent-circuit model for on-chip spiral inductors [J].

Cao, Y ;

Groves, RA ;

Huang, XJ ;

Zamdmer, ND ;

Plouchart, JO ;

Wachnik, RA ;

King, TJ ;

Hu, CM .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (03) :419-426

[2] A 21-26-GHz SiGe bipolar power amplifier MMIC [J].

Cheung, TSD ;

Long, JR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (12) :2583-2597

[3] Millimeter-wave CMOS design [J].

Doan, CH ;

Emami, S ;

Niknejad, AM ;

Brodersen, RW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (01) :144-155

[4]

KOOLEN MCAM, 1991, PROCEEDINGS OF THE 1991 BIPOLAR CIRCUITS AND TECHNOLOGY MEETING, P188, DOI 10.1109/BIPOL.1991.160985

[5] A Ka-band CMOS power amplifier using new substrate-shielded coplanar waveguide [J].

Lee, Jong-Wook ;

Heo, Sang-Moo .

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2008, 50 (11) :2815-2817

[6] 90 nm CMOS MMIC amplifier [J].

Masud, MA ;

Zirath, H ;

Ferndahl, M ;

Vickes, HO .

2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2004, :201-204

[7] Millimeter-wave CMOS circuit design [J].

Shigematsu, H ;

Hirose, T ;

Brewer, F ;

Rodwell, M .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (02) :472-477

[8]

TSAI JH, 2007, IEEE MTT S INT MICR, P1129

[9] Algorithmic design of CMOS LNAs and PAs for 60-GHz radio [J].

Yao, Terry ;

Gordon, Michael Q. ;

Tang, Keith K. W. ;

Yau, Kenneth H. K. ;

Yang, Ming-Ta ;

Schvan, Peter ;

Voinigescu, Sorin P. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (05) :1044-1057

← 1 →