Solution-processable end-functionalized tetrathienoacene semiconductors: Synthesis, characterization and organic field effect transistors applications

被引：13

作者：

Mamillapalli, Narendra Chary ^{[1
]}

Vegiraju, Sureshraju ^{[1
]}

Priyanka, Pragya ^{[1
]}

Lin, Chih-Yu ^{[2
]}

Luo, Xian-Lun ^{[2
]}

Tsai, Hsiang-Chi ^{[2
]}

Hong, Shao-Huan ^{[2
]}

Ni, Jen-Shyang ^{[1
]}

Lien, Wei-Chieh ^{[1
]}

Kwon, Guhyun ^{[3
]}

Yau, Shueh Lin ^{[1
]}

Kim, Choongik ^{[3
]}

Liu, Cheng-Liang ^{[2
]}

Chen, Ming-Chou ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Chem, Taoyuan 32001, Taiwan

[2] Natl Cent Univ, Dept Chem & Mat Engn, Taoyuan 32001, Taiwan

[3] Sogang Univ, Dept Chem & Biomol Engn, Seoul 04107, South Korea

来源：

DYES AND PIGMENTS | 2017年 / 145卷

基金：

新加坡国家研究基金会;

关键词：

Tetrathienoacene; Organic field effect transistors; Solution-shearing; Organic semiconductors; Thiophenylvinylthiophene; THIN-FILM TRANSISTORS; CHARGE-TRANSPORT; PERFORMANCE; ELECTRONICS; CHEMISTRY; POLYMERS; CELLS;

D O I：

10.1016/j.dyepig.2017.06.017

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

A series of dialkylated tetrathienoacene (TTAR)-based solution-processable small molecular organic semiconductors have been synthesized and characterized for organic field effect transistor (OFET) applications. The central dialkylated TTAR moiety was end-capped with thiophenylvinylthiophene (TVT), bithiophene (bT), and thienothiophene (TT) to afford new it-conjugated pi-type active materials, DTVT-TTAR (1), DbT-TTAR (2), and DTT-TTAR (3), respectively. The physical and electrochemical properties and theoretical calculations as well as OFETs performance and thin film morphologies and microstructures of these new soluble TTARs are systematically studied. Using a solution-shearing method, DTVT-TTAR exhibits p-channel transport with the highest mobility of up to 0.18 cm(2) V(-1)s(-1) and current ON/OFF ratios of 10(4)-10(6), which is one of the highest hole mobilities for the solution-processed TTAR-based small molecules. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：584 / 590

页数：7

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