Characteristics of SiF4 Plasma Doping (PLAD)

被引：0

作者：

Qin, Shu ^{[1
]}

Raj, Deven ^{[2
]}

Hu, Y. Jeff ^{[1
]}

McTeer, Allen ^{[1
]}

Maynard, Helen ^{[2
]}

机构：

[1] Micron Technol Inc, Boise, ID 83707 USA

[2] Appl Mat Inc, VSE, Gloucester, MA 01930 USA

来源：

2016 21ST INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT) | 2016年

关键词：

SiF4; plasma; etching/RIE and deposition effects; F profile and dose; ion mass spectroscopy;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiF4 PLAD has been systematically characterized and optimized. The correlations between the etching, deposition, retained F dose and profile as functions of the PLAD process variables including implant voltage, RF power, pressure, pulse duty cycle, and the diluting gases have been extensively investigated. It was found that PLAD process by using pure SiF4 is in an etching or RIE regime, but can be adjusted to minimize the etching effect. It was found that diluting SiF4 with different gases can significantly impact etching and deposition characteristics. The selectivity of etching and deposition behaviors on the different substrate materials such as poly-Si, silicon oxide, and silicon nitride have been explored. With the understanding of these behaviors, SiF4 PLAD can be optimized for multiple precision doping and material modification applications

引用

页数：4

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