Effect of gate oxide breakdown on rf device and circuit performance

被引：0
作者：
Yang, H [1 ]
Yuan, JS [1 ]
Xiao, EJ [1 ]
机构：
[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Orlando, FL 32816 USA
来源：
41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年
关键词：
gate oxide breakdown;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The degradation of S-parameters of 0.16 mum NMOS devices due to gate oxide breakdown is examined. An equivalent circuit model for MOSFETs after gate oxide breakdown is proposed. The influence of nMOSFET BD on the performance of a low noise amplifier is studied using the equivalent circuit model. Depending on which device and how many fingers breakdown, there is a nonzero probability that the circuit continues to work, despite that the performance of S-parameters and noise figure drastically degrades.
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页码：1 / 4
页数：4
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