Reversal of forward voltage drift in 4H-SiC p-i-n diodes via low temperature annealing

被引：40

作者：

Caldwell, Joshua D. ^{[1
]}

Stahlbush, Robert E. ^{[1
]}

Hobart, Karl D. ^{[1
]}

Glembocki, Orest J. ^{[1
]}

Liu, Kendrick X. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 14期

关键词：

D O I：

10.1063/1.2719650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recent reports have shown that Shockley stacking fault (SSF) growth in 4H-SiC may be reversed via low temperature (210-600 degrees C) annealing. It is not clear if the associated drift in the forward voltage drop (V-f) is also reversed. Here we show that annealing of SSFs causes the complete and repeatable recovery of V-f. Furthermore, by looking at the time-dependent recovery of V-f during both the current stressing and thermal annealing of a single diode, we ascertain that the mechanisms for these two processes are different. (c) 2007 American Institute of Physics.

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页数：3

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